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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Enhanced Schottky barrier on InGaAs for high performance photodetector applications

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72084

    Title: Enhanced Schottky barrier on InGaAs for high performance photodetector applications
    Authors: L. He;M. J. Costello;K. Y. Cheng;D. E. Wohlert
    教師: 鄭克勇
    Date: 1998
    Publisher: American Vacuum Society
    Relation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Volume 16, Issue 3, May 1998, Pages 1646 - 1649
    Keywords: silver
    indium compounds
    gallium arsenide
    III-V semiconductors
    Schottky barriers
    atomic force microscopy
    surface structure
    island structure
    Abstract: A low temperature (LT=77 K) processing technique was used for Schottky metal deposition on InGaAs. The Schottky barrier height of Ag/InGaAs contact processed at low temperature was found to be 0.64 eV. This value is more than two times higher than that of the barrier height of 0.30 eV obtained from the sample processed at room temperature (RT). The enhanced Schottky contacts are superior for the application on high performance semiconductor photodetectors. The current–voltage–temperature (I–V–T) measurements were conducted to study the current transport mechanism. Atomic force microscope was used to study the surface morphology correlating with the electrical properties. The LT metal showed cracked structure, which combined by islands, while the RT metal surface appeared to be more uniform with some sharp dots.
    Relation Link: http://www.avs.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72084
    Appears in Collections:[電機工程學系] 期刊論文

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