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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Incorporation of arsenic and phosphorus in GaxIn1-xAsyP1-y alloys grown by MBE using solid phosphorus and arsenic valved cracking cells


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72111


    Title: Incorporation of arsenic and phosphorus in GaxIn1-xAsyP1-y alloys grown by MBE using solid phosphorus and arsenic valved cracking cells
    Authors: J. N. Baillargeon;A. Y. Cho;K. Y. Cheng
    教師: 鄭克勇
    Date: 1996
    Publisher: American Institute of Physics
    Relation: Journal of Applied Physics, American Institute of Physics, Volume 79, Issue 10, May 1996, Pages 7652-7656
    Keywords: THRESHOLD CURRENT
    FABRICATION
    LASER DIODES
    HETEROJUNCTIONS
    CHEMICAL COMPOSITION
    FILM GROWTH
    MOLECULAR BEAM EPITAXY
    GALLIUM ARSENIDES
    INDIUM PHOSPHIDES
    Abstract: Growth of GaxIn1−xAsyP1−y was performed on (001) InP by molecular‐beam epitaxy employing solid phosphorus and arsenic valved sources. Relative anion incorporation rates were found strongly dependent upon the Ga mole fraction, growth temperature, and incident As and P beam fluxes. The relative incorporation of As and P can be predicted from the ratio of the square of the incident column‐V fluxes. Although the As anion always incorporated preferentially into the lattice, significant enhancement in P incorporation was observed as growth temperature and Ga mole fraction increased. Strong spinoidal decomposition and a temperature‐dependent surface morphology was found for lattice‐matched compositions having peak photoluminescence emission wavelengths between 1.25 and 1.36 μm. Heterojunction laser diodes utilizing different GaxIn1−xAsyP1−y active regions were fabricated with emission ranging from 1.21 to 1.53 μm. The best broad area threshold current density obtained for a 500 μm cavity length was 1.7 kA/cm2 with a maximum two facet slope efficiency of 0.24 W/A, which is comparable to the state‐of‐art performance.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72111
    Appears in Collections:[電機工程學系] 期刊論文

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