In view of the potential advantages of using field‐emission cathodes as electron sources, a renewed interest in advanced IC technology utilizing silicon‐based coldcathode microelectronics is emerging. However, some etching results concerning emitter formation are still unknown. This paper presents a study of emitter formation by various wet and dry etching methods. Some geometrical models are given for the analysis of anisotropic etching results. The emission features from different emitter arrays are also given for comparison. Through understanding the emission characteristics of various emitter arrays, a novel design for Field‐Emission Flat Panel Display is proposed.