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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Preliminary steps toward industrialization of Cu-III-VI2 thin-film solar cells: development of an intelligent design tool for non-stoichiometric photovoltaic materials


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72244


    Title: Preliminary steps toward industrialization of Cu-III-VI2 thin-film solar cells: development of an intelligent design tool for non-stoichiometric photovoltaic materials
    Authors: Chang HH;Ueng HY;Hwang HL
    教師: 黃惠良
    Date: 2003
    Publisher: Elsevier
    Relation: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Elsevier, Volume 64, Issue 9-10, SEP-OCT 2003, Pages 2047-2053
    Keywords: P-TYPE
    TRANSPORT-PROPERTIES
    DEFECT PHYSICS
    CUINSE2
    SEMICONDUCTOR
    Abstract: In this paper, we introduce the idea of intelligent design of thin film CIGS solar cell, and we focus on the methodology of material design. We first describe in detail the calculation of the neutral defect concentrations of non-stoichiometric CuInSe2, CuGaSe2 and ZnO under specific atomic chemical potential conditions (mu(x) = 0, x = Cu,In/Ga,Zn), and this calculation is the main procedure in the intelligent design and the key to the device design and process design. We then calculate the carrier concentrations and the electrical properties of these materials of different atomic constitutions. The main functions of this CAD tool are demonstrated.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72244
    Appears in Collections:[電機工程學系] 期刊論文

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