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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A novel thin gate-oxide-thickness measurement method by LDD (lightly-doped-drain) NMOS (N-channel metal-oxide-semiconductor) transistors

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72261

    Title: A novel thin gate-oxide-thickness measurement method by LDD (lightly-doped-drain) NMOS (N-channel metal-oxide-semiconductor) transistors
    Authors: Jiaw-Ren Shin;Jian-Hsing Lee;Liew, B.K.;Huey-Liang Hwang
    教師: 黃惠良
    Date: 1998
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Japanese Journal of Applied Physics, Volume 37, Issue 1AB, JAN 15 1998, Pages L1-L3
    Keywords: CMOS integrated circuits
    electric breakdown
    thickness measurement
    Abstract: In this paper, we propose a novel thin gate-oxide-thickness measurement method by using Lightly-Doped-Drain (LDD) N-Channel Metal-Oxide-Semiconductor (NMOS) snapback characteristics. For device with thin oxide 150 Å~60 Å and optimized LDD doping profile, the drain breakdown voltage will be oxide-thickness limited, and therefore the oxide breakdown's critical-field is about 10 MV/cm. By this characteristic, a high-voltage sine-waveform generator provides the necessary voltage to lead to the grounded-gate LDD-NMOS happening gate-assisted drain breakdown and drives its parasitic n-p-n bipolar turn-on. The voltage-waveform collapses immediately as the applied-voltage exceeds the critical oxide-field 10 MV/cm. Therefore, the oxide thickness can be determined.
    Relation Link: http://jjap.ipap.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72261
    Appears in Collections:[電機工程學系] 期刊論文

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