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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A 10 GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72305


    Title: A 10 GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver
    Authors: A. Ketterson;J. -W. Seo;M. Tong;K. Nummila;D. Ballegeer;S. -M. Kang;K. Y. Cheng;I. Adesida
    教師: 鄭克勇
    Date: 1992
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Electron Devices, IEEE Transactions on, Institute of Electrical and Electronics Engineers, Volume 39, Issue 11, Nov 1992, Pages 2676 - 2677
    Keywords: pseudomorphic
    GaAs/InGaAs/AlGaAs
    MODFET
    OEIC
    Abstract: Summary form only given. High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a 0.85-μm wavelength sensitive high-speed OEIC (optoelectronic integrated circuit) lightwave receiver. The receiver circuit utilizes a transimpedance amplifier topology with all active components including a variable active feedback resistor consisting of a common-gate FET. Discrete MODFETs with -0.7-V thresholds exhibit transconductances of over 500 mS/mm and fTs of ~70 GHz. Receiver transimpedance gains (ZT) from 200 to 1500 Ω are obtained by varying the active feedback resistor. An amplifier 3-dB analog bandwidth of 10 GHz is measured with a maximally flat ZT response of 300 Ω, resulting in a transimpedance-bandwidth product of 3 THz-Ω. The receiver frequency response, deduced from optical pulse measurements, confirms a 10-GHz bandwidth and indicates that the receiver is suitable for unequalized 18-Gb/s NRZ communications
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72305
    Appears in Collections:[電機工程學系] 期刊論文

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