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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Numerical analysis of junction-depth effect in the grating-type Si solar cell

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72312

    Title: Numerical analysis of junction-depth effect in the grating-type Si solar cell
    Authors: H.L. Hwang;D.L. Liu;J.E. Lin;J.J. Loferski
    教師: 黃惠良
    Date: 1981
    Publisher: American Institute of Physics
    Relation: Journal of Applied Physics, American Institute of Physics, Volume 52, Issue 3, March 1981, Pages 1548-1551
    Keywords: junction-depth effect
    grating-type Si solar cell
    alternating direction implicit method
    Abstract: Numerical simulations are used to analyze the performance of Si grating cells. The alternating direction implicit method is used to solve the two-dimensional diffusion equations. For a fixed grating geometry, the optimum junction depth is determined. The performance of the deep-junction grating cells is contrasted with that of the more common shallow-junction cells. The results show that the performance of the cells is enhanced both by incorporating a black-surface field and minority-carrier mirrors into the grating structure
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72312
    Appears in Collections:[電機工程學系] 期刊論文

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