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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A 0.26-μm2 U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72506

    Title: A 0.26-μm2 U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology
    Authors: Lai, Han-Chao;Cheng, Kai-Yuan;King, Ya-Chin;Lin, Chrong-Jung
    教師: 林崇榮
    Date: 2007
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS, Institute of Electrical and Electronics Engineers, Volume 28, Issue 9, SEP 2007, Pages 837-839
    Keywords: Advanced cmos
    Cell sizes
    Cmos logic process
    CMOS one time programming (OTP)
    Cmos technologies
    Compatible process -
    Abstract: A novel one time programming (OTP) cell with a nitride-based storage has been developed for advanced programmable logic applications. This cell that is processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/off window. It exhibits a superior disturb immunity in program and read operations. In addition, a very small cell size (0.263 μm2) has been achieved using 90-nm pure CMOS logic process and is scalable in more advanced CMOS logic technologies by eliminating the constraint of transistor gate-oxide thickness. The all new OTP cell has a wide ON/OFF window and a superior writing efficiency by source-side injection programming mechanism. This novel OTP cell is a very promising programmable logic solution, with a fully CMOS-logic-compatible process below the 90-nm node.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72506
    Appears in Collections:[電機工程學系] 期刊論文

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