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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Quantitative study of charge-to-breakdown of thin gate oxide for a p+-poly-Si metal oxide semiconductor capacitor


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72662


    Title: Quantitative study of charge-to-breakdown of thin gate oxide for a p+-poly-Si metal oxide semiconductor capacitor
    Authors: Li-shuenn Wang;Fonshan Huang;Mou-shiung Lin
    教師: 葉鳳生
    Date: 1997
    Publisher: Electrochemical Society
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Electrochemical Society, Volume 144, Issue 2, FEB 1997, Pages 698-704
    Keywords: Experimental study
    Reliability
    MOS capacity
    Silicon
    Polycrystal
    Electric stress
    Abstract: The charge-to-breakdown (Qbd) for p+-poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Qbd(+) increases with dopant concentration, but Qbd(-) decreases with the boron concentration. Meanw ile a large difference was found between the Qbd(+) and Qbd(-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔVg) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Qbd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Qbd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Qbd is related to the boron implantation.
    Relation Link: http://www.electrochem.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72662
    Appears in Collections:[電機工程學系] 期刊論文

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