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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72668

    Title: High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
    Authors: Hu CW;Chang TC;Tu CH;Huang YH;Lin CC;Chen MC;Huang FS;Sze SM,;Tseng TY
    教師: 葉鳳生
    Date: 2010
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS, Electrochemical Society, Volume 13, Issue 3, 2010, Pages H49-H51
    Keywords: X-ray photoelectron spectra
    vacuum deposition
    rapid thermal annealing
    transmission electron microscopy
    random-access storage
    nanostructured materials
    Abstract: We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800°C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5×1012 cm-2. Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance–voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
    Relation Link: http://www.electrochem.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72668
    Appears in Collections:[電機工程學系] 期刊論文

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