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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO2/ZrO2 Dielectrics

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72688

    Title: Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO2/ZrO2 Dielectrics
    Authors: Lin SH;Chiang KC;Yeh FS;Chin A
    教師: 葉鳳生
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS, Institute of Electrical and Electronics Engineers, Volume 30, 2009, Pages 1287
    Keywords: Metal-Insulator-Metal
    Abstract: We have studied the stress reliability of high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degC leakage current, capacitance vwww.lw20.comariation (DeltaC/C), and long-term reliability. For a high density of 26 fF/mum2, good extrapolated ten-year reliability of small DeltaC/C ~ 0.71% is obtained for the Ni/10-nm-TiO2/6.5-nm- ZrO2/ TiN device at 2.5-V operation.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72688
    Appears in Collections:[電機工程學系] 期刊論文

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