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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72692

    Title: Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors
    Authors: Huang CC;Cheng CH;Liou BH;Yeh FS;Chin A
    教師: 葉鳳生
    Date: 2009
    Publisher: Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS, Japan Society of Applied Physics, Volume 48, 2009
    Keywords: Ta2O5
    Abstract: The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510 ppm/V2 and a high capacitance density of ˜20 fF/μm2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.
    Relation Link: http://www.jsap.or.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72692
    Appears in Collections:[電機工程學系] 期刊論文

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