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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72694


    Title: Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
    Authors: Chin A;Chang MF;Lin SH;Chen WB;Lee PT;Yeh FS;Liao CC;Li MF;Su NC;Wang SJ;Chin A;Chang MF;Lin SH;Chen WB;Lee PT;Yeh FS;Liao CC;Li MF;Su NC;Wang SJ
    教師: 葉鳳生
    Date: 2009
    Publisher: Elsevier
    Relation: MICROELECTRONIC ENGINEERING, Elsevier, Volume 86, 2009, Pages 1728
    Keywords: High-κ
    Metal-gate
    CMOS
    Vfb roll-off
    EOT
    Abstract: The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6–1.2 nm EOT.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72694
    Appears in Collections:[電機工程學系] 期刊論文

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