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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Improved high temperature retention for charge-trapping memory by using double quantum barriers

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72708

    Title: Improved high temperature retention for charge-trapping memory by using double quantum barriers
    Authors: H-J Yang;A. Chin;S-H Lin;F-S Yeh;S.P. McAlister
    教師: 葉鳳生
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Electron Device Letters, IEEE, Institute of Electrical and Electronics Engineers, Volume 29, Issue 4, April 2008, Pages 386 - 388
    Keywords: charge-trapping
    double quantum barriers
    Abstract: We have fabricated the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E) condition, an initial memory window of 2.6 V and good extrapolated ten-year retention window of 1.9 V are achieved at 125degC. Very small P/E retention decays of 64/22 mV/dec at 125degC are measured due to double quantum barriers to confine the charges in deep-trapping-energy Hf0.3O0.5N0.2 well.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72708
    Appears in Collections:[電機工程學系] 期刊論文

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