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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72725


    Title: Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD
    Authors: Ta-Shan Chang;Ting-Chang Chang;Po-Tsun Liu;Shu-Wei Tsao;Feng-Shen Yeh
    教師: 葉鳳生
    Date: 2007
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 516, Issues 2-4, 3 December 2007, Pages 374-377
    Keywords: TFT
    Passivation
    Low-k
    HSQ
    Abstract: Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72725
    Appears in Collections:[電機工程學系] 期刊論文

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