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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Surface Modification on Methylsilsesquioxane Low k Dielectric Material

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72743

    Title: Surface Modification on Methylsilsesquioxane Low k Dielectric Material
    Authors: C. H. Chen;F. S. Huang
    教師: 葉鳳生
    Date: 2003
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 441, Issues 1-2, 22 September 2003, Pages 248-254
    Keywords: Thermal stability
    Oxygen thermal treatment
    Space-charge-limited current
    Poole–Frenkel mechanism
    Abstract: The physical properties and thermal stability of surface modified methylsilsesquioxane (MSQ) were studied. Various post-treatments, such as thermal oxygen, thermal N2O and oxygen plasma, were adopted on the cured MSQ film as the surface-modification process. The Cu/TaN/MSQ/Si metal-insulation-semiconductor capacitors with various surface modified MSQ films were prepared to measure the dielectric constant, capacitance–voltage and current–voltage characteristics. X-Ray photoelectron spectroscopy and Fourier transform infrared spectroscopy were performed in order to understand the chemical composition of the modified film. From the above measurements, we find the best surface treatment condition for MSQ in Cu metallization.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72743
    Appears in Collections:[電機工程學系] 期刊論文

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