Noise measurements were performed on electromigration-damaged single-layer AlSiCu films, that show no resistance change and on multilayer AlSiCu/TiW films that show obvious resistance increase before the samples open. The experimental results showed that single-layer AlSiCu films have 1/f noise only, and no 1/f2 noise is observed during the entire stress period. Moreover, the 1/f noise increases drastically shortly before the samples open. For multilayer samples, 1/f2 noise was observed during the stress period, and increased with the stress current density. This result implies that the theory of resistance-drift-induced 1/f2 noise is valid in electromigration-damaged metal thin films.