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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The 1/f noise associated with electromigration in AlSiCu thin films


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72849


    Title: The 1/f noise associated with electromigration in AlSiCu thin films
    Authors: Yu Cheng;Jeng Gong;Der-Ming Liou;Hoshin Yee
    教師: 龔正
    Date: 1999
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Japanese Journal of Applied Physics, Volume 38, Issue 1A, JAN 1999, Pages 291-292
    Keywords: electromigration
    1/f noise
    1/f2 noise
    AlSiCu thin films
    AlSiCu/TiW thin films
    resistance-drift-induced 1/f2 noise
    Abstract: Noise measurements were performed on electromigration-damaged single-layer AlSiCu films, that show no resistance change and on multilayer AlSiCu/TiW films that show obvious resistance increase before the samples open. The experimental results showed that single-layer AlSiCu films have 1/f noise only, and no 1/f2 noise is observed during the entire stress period. Moreover, the 1/f noise increases drastically shortly before the samples open. For multilayer samples, 1/f2 noise was observed during the stress period, and increased with the stress current density. This result implies that the theory of resistance-drift-induced 1/f2 noise is valid in electromigration-damaged metal thin films.
    Relation Link: http://jjap.ipap.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72849
    Appears in Collections:[電機工程學系] 期刊論文

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