English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 12789672      Online Users : 87
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A simple method to analyze the electrical properties of high power lateral double-diffused metal-oxide-semiconductor transistors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72850


    Title: A simple method to analyze the electrical properties of high power lateral double-diffused metal-oxide-semiconductor transistors
    Authors: Tsung-Yi Huang;Jeng Gong
    教師: 龔正
    Date: 1999
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Japanese Journal of Applied Physics, Volume 38, Issue 2B, FEB 15 1999, Pages L170-L173
    Keywords: transconductance
    on-resistance
    analytical model
    high power
    LDMOSFET
    Abstract: In this paper a new approach of obtaining the electrical properties of the power lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOSFET) is proposed. The device is regarded as a junction field-effect transistor (JFET), the N-well region, in series with an active metal-oxide-semiconductor field-effect transistors (MOSFET). The I-V relation of these two parasitic FETs were first separately obtained from actual device structure and then combined together to generate the I-V relation for the power MOSFET. This model also explains why the transconductance has a maximum value at intermediate gate voltage and decreases drastically with higher gate voltages. The simulation program, MEDICI, verifies the accuracy of this analytical method. Since the model contains only two parasitic devices, it affords a first and easy method to analyze the I-V characteristic of power MOSFET.
    Relation Link: http://jjap.ipap.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72850
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML179View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback