National Tsing Hua University Institutional Repository:Investigation on the initial hot carrier injection in P-LDMOS transistors with Shallow trench isolation structure
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Investigation on the initial hot carrier injection in P-LDMOS transistors with Shallow trench isolation structure


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    题名: Investigation on the initial hot carrier injection in P-LDMOS transistors with Shallow trench isolation structure
    作者: R.Y. Su;P.Y. Chiang;J. Gong;T.Y. Huang;C.L. Tsai;C.C. Chou;C.M. Liu
    教師: 龔正
    日期: 2008
    出版者: Institute of Electrical and Electronics Engineers
    關聯: Electron Devices, IEEE Transactions on, Institute of Electrical and Electronics Engineers, Volume 55, Issue 12, December, 2008, Pages 3569-3574
    关键词: P-LDMOS
    transistors
    Shallow trench isolation structure
    摘要: In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial IDLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI.
    相関连結: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72862
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