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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72890


    Title: Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric
    Authors: D. C. Hsu;M. T. Wang;J. Y. M. Lee;P. C. Juan
    教師: 李雅明
    Date: 2007
    Publisher: American Institute of Physics
    Relation: Journal of Applied Physics, American Institute of Physics, Volume 101, Issue 9, 2007, Pages 094105 pp.1-4
    Keywords: semiconductor
    ZrO2
    dielectric
    Abstract: Metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric were fabricated. The time dependent dielectric breakdown (TDDB) of ZrO2 capacitors was studied. It was observed that the Weibull slopes were independent of the capacitor area. The Weibull slopes had no clear dependence on ZrO2 thickness. The TDDB of ZrO2 follows the E model. The activation energy Ea was linearly dependent on the electric field and the field acceleration parameter γ is independent of temperature.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72890
    Appears in Collections:[電機工程學系] 期刊論文

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