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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Metal-oxide-high-k dielectric-oxide - semiconductor (MOHOS) capacitors and field-effect transistors for memory applications

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72892

    Title: Metal-oxide-high-k dielectric-oxide - semiconductor (MOHOS) capacitors and field-effect transistors for memory applications
    Authors: H. H. Hsu;I. Y. K. Chang;J. Y. M. Lee
    教師: 李雅明
    Date: 2007
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, Volume 28, Issues 11, 2007, Pages 964-966
    Keywords: Metal-oxide-high-k dielectric-oxide - semiconductor
    Abstract: Metal-oxide-high-kappa dielectric-oxide-silicon capacitors and transistors are fabricated using HfO2 and Dy2O3 high-kappa dielectrics as the charge storage layer. The programming speed of Al/SiO2/Dy2O3/ SiO2/Si transistor is characterized by a DeltaV th shift of 1.0 V with a programming voltage of 12 V applied for 10 ms. As for retention properties, the Al/SiO2/Dy2O3/ SiO2/Si transistors can keep a DeltaV th window of 0.5 V for 2 times108 s. The corresponding numbers for Al/ SiO2/HfO2/SiO2/Si transistors are 100 ms and 2 times104 s, respectively. The better performance of the Al/SiO2/Dy2O3/ SiO2/Si transistors is attributed to the larger conduction band offset at the Dy2O3/SiO2 interface.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72892
    Appears in Collections:[電機工程學系] 期刊論文

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