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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide- semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72895


    Title: The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide- semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics
    Authors: H. S. Ho;I. Y. K. Chang;J. Y. M. Lee,
    教師: 李雅明
    Date: 2007
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Volume 91, Issue 17, 2007, Pages 173510, pp.1-3
    Keywords: mechanisms
    semiconductor
    ZrO2
    Sm2O3
    dielectrics
    Abstract: The mobility degradation mechanisms of n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics were studied. The temperature dependence of device characteristics was studied in the temperature range from 11 to 300 K. n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with SiO2 gate dielectric are used as reference. The electron mobility of ZrO2-gated n-MOSFETs is limited by Coulomb scattering. The extra source of Coulomb scattering is attributed to additional oxide trapped charges. The electron mobility in Sm2O3-gated n-MOSFETs is limited by phonon scattering. The extra source for phonon scattering is attributed to soft optical phonons in Sm2O3.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72895
    Appears in Collections:[電機工程學系] 期刊論文

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