Metal-oxide-semiconductor field-effect transistors with CeO2/HfO2 laminated gate dielectrics were fabricated. The transistors have a subthreshold slope of 74.9 mV/decade. The interfacial properties were measured using gated diodes. The surface state density Dit was 9.78×1011 cm−2 eV−1. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diode were about 6.11×103 cm/s and 1.8×10−8 s, respectively. The effective capture cross section of surface state (σs) extracted using the subthreshold-swing measurement and the gated diode was about 7.69×10−15 cm2. The effective electron mobility of CeO2/HfO2 laminated gated transistors was determined to be 212 cm2/V s.