National Tsing Hua University Institutional Repository:The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics


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    题名: The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics
    作者: I. Y. K. Chang;C. H. Chen;F. C. Chiu;J. Y. M. Lee
    教師: 李雅明
    日期: 2007
    出版者: American Institute of Physics
    關聯: Applied Physics Letters, American Institute of Physics, Volume 91, Issue 20, 2007, Pages 203517, pp.1-3
    关键词: semiconductor
    transistors
    CeO2/HfO2
    dielectrics
    摘要: Metal-oxide-semiconductor field-effect transistors with CeO2/HfO2 laminated gate dielectrics were fabricated. The transistors have a subthreshold slope of 74.9 mV/decade. The interfacial properties were measured using gated diodes. The surface state density Dit was 9.78×1011 cm−2 eV−1. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diode were about 6.11×103 cm/s and 1.8×10−8 s, respectively. The effective capture cross section of surface state (σs) extracted using the subthreshold-swing measurement and the gated diode was about 7.69×10−15 cm2. The effective electron mobility of CeO2/HfO2 laminated gated transistors was determined to be 212 cm2/V s.
    相関连結: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72898
    显示于类别:[電機工程學系] 期刊論文

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