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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72900


    Title: Advance in next century nanoCMOSFET research
    Authors: H. L. Hwang;Y. K. Chiou;C. H. Chang;C. C. Wang;K. Y. Lee;T. B. Wu;R. N. Kwo;M. H. Hong;K. S. Chang-Liao;C. Y. Lu;C. C. Lu;F. C. Chiu;C. H. Chen;J. Y. M. Lee;A. Chin
    教師: 李雅明
    Date: 2007
    Publisher: Elsevier
    Relation: Applied Surface Science, Elsevier, Volume 254, Issue 1, 31 October 2007, Pages 236-241
    Keywords: Nano
    MOSFET
    High-k dielectric
    Metal gate
    Abstract: It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72900
    Appears in Collections:[電機工程學系] 期刊論文

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