English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13946485      Online Users : 60
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors with Dy2O3 Gate Dielectric


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72904


    Title: Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors with Dy2O3 Gate Dielectric
    Authors: S. C. Chang;S. Y. Deng;J. Y. M. Lee
    教師: 李雅明
    Date: 2006
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Volume 89, Issue 5, 2006, Pages 053504, pp.1-3
    Keywords: Semiconductor
    Dy2O3
    Dielectric
    Abstract: Dy2O3 is a promising candidate for future metal-oxide-semiconductor (MOS) gate dielectric applications. In this work, MOS capacitors and field-effect transistors with Dy2O3 gate dielectric were fabricated. The maximum electron mobility was 339 cm2/V s. The time dependent dielectric breakdown (TDDB) of Dy2O3 as a function of electric field and temperature was studied. It was observed that the Weibull slopes were independent of capacitor area and the Weibull slope increased with increasing Dy2O3 thickness. The TDDB of Dy2O3 followed the E model. The activation energy Ea was linearly dependent on the electric field and the field acceleration parameter γ is independent of temperature.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72904
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    2030179010097.pdf672KbAdobe PDF555View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback