English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13687122      Online Users : 49
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Electrical characteristics and reliability properties of metal-oxide-semiconductor field effect transistors with La2O3 gate dielectric


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72905


    Title: Electrical characteristics and reliability properties of metal-oxide-semiconductor field effect transistors with La2O3 gate dielectric
    Authors: C. H. Hsu;M. T. Wang;J. Y. M. Lee
    教師: 李雅明
    Date: 2006
    Publisher: American Institute of Physics
    Relation: Journal of Applied Physics, American Institute of Physics, Volume 100, Issue 7, 2006, Pages 074108, pp.1-3
    Keywords: semiconductor
    La2O3
    dielectric
    Abstract: La2O3 is a promising candidate for future metal-oxide-semiconductor gate dielectric applications. In this work, metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric were fabricated. The maximum electron mobility is 270 cm2/V s. The time dependent dielectric breakdown (TDDB) of La2O3 was studied. It was observed that the Weibull slopes were independent of capacitor area. The Weibull slope increases with increasing La2O3 thickness. The TDDB of La2O3 follows the E model. The percolation model and electron trapping are used to explain the TDDB of La2O3 dielectrics.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72905
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    2030179010098.pdf679KbAdobe PDF701View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback