National Tsing Hua University Institutional Repository:Chemical Vapour Deposition of Tantalum Silicide Thin Film from Difluorosilylene and Tantalum Halides
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    NTHUR > Presidents > Liu, Chao-Shiuan (1987-1993) > LCS Journal / Magazine Articles >  Chemical Vapour Deposition of Tantalum Silicide Thin Film from Difluorosilylene and Tantalum Halides


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81107


    Title: Chemical Vapour Deposition of Tantalum Silicide Thin Film from Difluorosilylene and Tantalum Halides
    Authors: Lee, C. Y.;Huang, J. L.;Liu, C. S.
    Teacher: 劉兆玄
    Date: 1996
    Publisher: Royal Society of Chemistry
    Relation: JOURNAL OF MATERIALS CHEMISTRY, Royal Society of Chemistry, Volume 6, Issue 7, JUL 1996, Pages 1131-1133
    Keywords: Silicide
    Difluoro Silylene
    CVD
    Tantalum
    Tantalum Halides
    Abstract: Thin films of TaSix have been grown on Si(111), SiO2 and graphite by LPCVD using SiF2 and TaX(5) (X = F, Cl) as the precursors. Thin films prepared at 190-300 degrees C contained polycrystalline TaSi2; 190 degrees C is the lowest temperature reported for the CVD preparation of TaSi2. The compositions of the thin films were found to be 50% TaSi2 and 50% amorphous silicon (a-Si).
    Relation Link: http://www.rsc.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81107
    Appears in Collections:[Liu, Chao-Shiuan (1987-1993)] LCS Journal / Magazine Articles
    [Department of Chemistry] CHEM Journal / Magazine Articles

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