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    National Tsing Hua University Institutional Repository > 歷任校長 > 劉兆玄 (1987-1993) > 期刊論文 >  Organometallic Ruthenium Source Reagents for Chemical Vapor Deposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81112


    Title: Organometallic Ruthenium Source Reagents for Chemical Vapor Deposition
    Authors: Lee, F.-J.;Chi, Y.;Hsu, P.-F.;Chou, T.-Y.;Liu, C.-S.;Peng, S.-M.;Lee, G.-H.
    教師: 劉兆玄
    Date: 2001
    Publisher: Wiley-VCH Verlag Berlin
    Relation: CHEMICAL VAPOR DEPOSITION, Wiley-VCH Verlag Berlin, Volume 7, Issue 3, MAY 2001, Pages 99-101
    Keywords: CHEMICAL-VAPOR-DEPOSITION
    RUO2 THIN-FILMS
    METAL-CARBONYLS
    COMPLEXES
    (BA,SR)TIO3
    INTEGRATION
    TECHNOLOGY
    PRECURSOR
    Abstract: The deposition of pure ruthenium thin films is reported from carbonyl β-diketonate precursors Ru(CO)2-(CH(C(O)R)2)2 (see Figure), where R = C(CH3)3 or CF3. The complexes are found to be excellent CVD precursors and the deposited films are reported to be fluorine free, which is one of the requirements for metallization applications in integrated circuit manufacturing.
    Relation Link: http://www.wiley-vch.de/publish/en/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81112
    Appears in Collections:[劉兆玄 (1987-1993)] 期刊論文
    [化學系] 期刊論文

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