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    National Tsing Hua University Institutional Repository > 歷任校長 > 劉兆玄 (1987-1993) > 期刊論文 >  Polycrystalline Si1-xGex Thin Films Formation by Chemical Vapor Deposition Using Silicondifluoride and Germanium Tetarchloride as Precursors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81115


    Title: Polycrystalline Si1-xGex Thin Films Formation by Chemical Vapor Deposition Using Silicondifluoride and Germanium Tetarchloride as Precursors
    Authors: Lee, C. Y.;Chang, W. T.;Liu, C.-S.
    教師: 劉兆玄
    Date: 2001
    Publisher: Royal Society of Chemistry
    Relation: Journal of Materials Chemistry, Royal Society of Chemistry, Volume 11, Issue 2, 2001, Pages 687-690
    Keywords: Polycrystalline
    Si1-xGex
    Chemical Vapor Deposition
    Silicondifluoride
    Germanium
    Tetarchloride
    Abstract: GexSi1 − x thin films (x = 0.03–0.75) were grown on Si(111), quartz and graphite by LPCVD using SiF2 and GeCl4 as the precursors at 450–700°C. Thin films prepared at 550–700°C contained polycrystalline GexSi1 − x. The composition of the thin film can be controlled by adjusting the reaction temperature and the relative inlet quantity of GeCl4. A linear correlation between the lattice parameters of the prepared GexSi1 − x thin films and the Ge contents x is established. A plausible reaction mechanism is proposed and discussed.
    Relation Link: http://www.rsc.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81115
    Appears in Collections:[劉兆玄 (1987-1993)] 期刊論文
    [化學系] 期刊論文

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