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    National Tsing Hua University Institutional Repository > 歷任校長 > 劉兆玄 (1987-1993) > 期刊論文 >  Fluorinated Aminoalkoxide CuII Complexes: New CVD Precursors for Deposition of Copper Metal


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81120


    Title: Fluorinated Aminoalkoxide CuII Complexes: New CVD Precursors for Deposition of Copper Metal
    Authors: Chi, Y.;Hsu, P.-F.;Liu, C.-S.;Ching, W.-L.;Chou, T.-Y.;Carty, A. J.;Peng, S.-M.;Lee, G.-H.;Chuang, S.-H.
    教師: 劉兆玄
    Date: 2002
    Publisher: Royal Society of Chemistry
    Relation: JOURNAL OF MATERIALS CHEMISTRY, Royal Society of Chemistry, Volume 12, Issue 12, 2002, Pages 3541-3550
    Keywords: CHEMICAL-VAPOR-DEPOSITION
    X-RAY STRUCTURES
    WALL REACTOR
    FILMS
    HEXAFLUOROACETYLACETONATE
    TEMPERATURE
    LIGANDS
    METALLIZATION
    PRESSURE
    GROWTH
    Abstract: Volatile low-melting Cu-II metal complexes of formula Cu[OC(CF3)(RCH2NHR2)-C-1](2) (R-1 = CF3 or CH3; R-2 = CH2CH2OMe, Bu-i, or Bu-t) and Cu[OC(CF3)(RCH2NMe2)-C-1](2) (R-1 = CF3 or CH3) have been synthesized and characterized by spectroscopic methods. A single-crystal X-ray diffraction study on Cu[OC(CF3)(2)CH2NHCH2CH2OMe](2) shows that one methoxyethyl group of the aminoalkoxide ligand forms an intramolecular dative bond to the Cu atom to produce a square-pyramidal geometry at the metal center, while the second is linked to the Cu atom of the adjacent molecule, giving an N2O4 octahedral coordination arrangement. For the second Bu-i-substituted complex, Cu[OC(CF3)(2)CH2NHBui](2), the X-ray structural analysis demonstrated an N2O2 square-planar geometry, with one alkoxide oxygen atom forming strong H-bonding to an adjacent water molecule. Metal CVD experiments were carried out, showing that the source reagents Cu[OC(CF3)(2)CH2NHBui](2), Cu[OC(CF3)(2)CH2NHBut](2), and Cu[OCMe(CF3)CH2NHBui](2), which possess a secondary amino group, are capable of depositing copper metal at temperatures of 250-300 degreesC under inert Ar carrier gas, while Cu[OCMe(CF3)CH2NMe2](2), with a tertiary amine group, requires the use of reductive H-2 carrier gas to induce metal deposition at lower temperatures.
    Relation Link: http://www.rsc.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81120
    Appears in Collections:[劉兆玄 (1987-1993)] 期刊論文
    [化學系] 期刊論文

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