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    National Tsing Hua University Institutional Repository > 歷任校長 > 劉兆玄 (1987-1993) > 期刊論文 >  Deposition of Ru and RuO2 Thin Films Employing Dicarbonyl Bis-Diketonate Ruthenium Complexes as CVD Source Reagent


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81126


    Title: Deposition of Ru and RuO2 Thin Films Employing Dicarbonyl Bis-Diketonate Ruthenium Complexes as CVD Source Reagent
    Authors: Lai, Y.-H.;Chen, Y.-L.;Chi, Y.;Liu, C.-S.;Carty, A. J.;Peng, S.-M.;Lee, G.-H.
    教師: 劉兆玄
    Date: 2003
    Publisher: Royal Society of Chemistry
    Relation: JOURNAL OF MATERIALS CHEMISTRY, Royal Society of Chemistry, Volume 13, Issue 8, 2003, Pages 1999-2006
    Keywords: BOTTOM ELECTRODE STRUCTURES
    METAL-CARBONYLS
    CHEMICAL-VAPOR-DEPOSITION
    (BA,SR)TIO3 CAPACITORS
    EPITAXIAL-GROWTH
    PRECURSOR
    MOCVD
    INTEGRATION
    PRESSURE
    DIOXIDE
    Abstract: Reaction of Ru-3(CO)(12) with 6 eq. of beta-diketone ligands (hfac) H, (tmhd) H, (acac) H and (tfac) H at 160 - 170 degreesC in a hydrocarbon solvent (pentane or hexane) affords the diketonate complexes [Ru(CO)(2)( hfac)(2)] ( 1), [Ru(CO)(2)(tmhd)(2)] (2), [Ru(CO)(2)(acac)(2)] (3) and [Ru(CO)(2)(tfac)(2)] (4) in high yields. These ruthenium complexes were characterized by spectroscopic methods; a single crystal X-ray diffraction study was carried out on one isomer of the tfac complex (4a), revealing an octahedral coordination geometry with two CO ligands located at cis-positions and with the CF3 groups of the beta-diketonate ligands trans to the CO ligands. Thermogravimetric analysis of complex ( 1) showed an enhanced volatility compared to the parent acac complex ( 3), attributed to the CF3 group reducing intermolecular attraction. Employing complexes ( 1) and ( 2) as CVD source reagents, ruthenium thin films can be deposited at temperatures of 350 degreesC - 450 degreesC under an H-2 atmosphere or at temperatures of 275 degreesC - 400 degreesC using a 2% mixture of O-2 in argon as carrier gas. For deposition carried out using complex ( 1) and under 100% O-2 atmosphere, RuO2 thin films with a preferred ( 200) orientation were obtained. The as-deposited thin films were characterized by surface and physical analytical techniques, such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction analysis (XRD) and four-point probe measurement.
    Relation Link: http://www.rsc.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81126
    Appears in Collections:[劉兆玄 (1987-1993)] 期刊論文
    [化學系] 期刊論文

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