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    National Tsing Hua University Institutional Repository > 生命科學院  > 生命科學系 > 期刊論文 >  Heterotypic Gap Junctions between Two Neurons in the Drosophila Brain Are Critical for Memory


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81445


    Title: Heterotypic Gap Junctions between Two Neurons in the Drosophila Brain Are Critical for Memory
    Authors: Chia-Lin Wu;Meng-Fu Maxwell Shih;Jason Sih-Yu Lai;Hsun-Ti Yang;Glenn C. Turner;Linyi Chen;Ann-Shyn Chiang
    教師: 陳令儀
    Date: 2011
    Publisher: Elsevier (Cell Press)
    Relation: Current Biology, Elsevier (Cell Press), Volume 21, Issue 10, MAY 2011, Pages 848-854
    Keywords: MUSHROOM BODY NEURONS
    OLFACTORY MEMORY
    DEPENDENT MEMORY
    NERVOUS-SYSTEM
    EXPRESSION
    PROTEIN
    MUTANT
    TRACE
    CONSOLIDATION
    MELANOGASTER
    Abstract: Gap junctions play an important role in the regulation of neuronal metabolism and homeostasis by serving as connections that enable small molecules to pass between cells and synchronize activity between cells [1, 2 and 3]. Although recent studies have linked gap junctions to memory formation [4 and 5], it remains unclear how they contribute to this process [1 and 5]. Gap junctions are hexameric hemichannels formed from the connexin and pannexin gene families in chordates and the innexin (inx) gene family in invertebrates [ 6 and 7]. Here we show that two modulatory neurons, the anterior paired lateral (APL) neuron and the dorsal paired medial (DPM) neuron, form heterotypic gap junctions within the mushroom body (MB), a learning and memory center in the Drosophila brain. Using RNA interference-mediated knockdowns of inx7 and inx6 in the APL and DPM neurons, respectively, we found that flies showed normal olfactory associative learning and intact anesthesia-resistant memory (ARM) but failed to form anesthesia-sensitive memory (ASM). Our results reveal that the heterotypic gap junctions between the APL and DPM neurons are an essential part of the MB circuitry for memory formation, potentially constituting a recurrent neural network to stabilize ASM.
    Relation Link: http://www.cell.com/cellpress
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/81445
    Appears in Collections:[生命科學系] 期刊論文
    [分子醫學研究所] 期刊論文
    [腦科學研究中心] 期刊論文

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