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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82141


    Title: Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
    Authors: G. -R. Lin;W. -C. Chen;F. Ganikhanov;C. -S. Chang;Ci-Ling Pan
    教師: 潘犀靈
    Date: 1996
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, v 69, n 7, 996-8, 12 Aug. 1996
    Keywords: carrier lifetimes
    effect of rapid thermal annealing (RTA) on GaAs
    Abstract: Femtosecond time-resolved reflectivity measurements, structural, and electrical analyses have been performed to investigate the effect of rapid thermal annealing (RTA) on GaAs implanted with 200 keV arsenic ions at 1016 ions/cm2. Ultrashort carrier lifetimes from 0.48 fs to 2.3 ps were observed for samples annealed at temperatures between 600 and 800°C. The time constants are somewhat shorter than those of RTA-annealed low-temperature molecular-beam epitaxy grown material, while following the same trend of longer time constants and recovery of resistance at higher annealing temperatures. Arsenic precipitates were not observed
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82141
    Appears in Collections:[物理系] 期刊論文

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