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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Picosecond Responses of Low-Dosage Arsenic-Ion-Implanted GaAs Photoconductors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82145


    Title: Picosecond Responses of Low-Dosage Arsenic-Ion-Implanted GaAs Photoconductors
    Authors: Gong-Ru Lin;Ci-Ling Pan
    教師: 潘犀靈
    Date: 1997
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, v 71, n 20, p 2901-2903, Nov 17 1997
    Keywords: CARRIER LIFETIMES
    SILICON
    Abstract: Ultrafast optoelectronic characteristics of arsenic-ion-implanted GaAs at dosages as low as 1013 ions/cm2 are reported. Ultrashort photoexcited carrier lifetimes of 0.23±0.02, 0.87±0.02, and 3±0.2 ps are found for as-implanted, rapid thermal switching response of photoconductive switches (PCSs) fabricated on the latter two materials are measured to be approx. 3 and 8 ps by electro-optic annealing. The leakage currents of the PCSs fabricated on furnace-annealed sample is as low as 30 nA. This comparable to the same device made on the semi-insulated GaAs substrate
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82145
    Appears in Collections:[物理系] 期刊論文

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