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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82163


    Title: Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs
    Authors: Gong-Ru Lin;Tze-An Liu;Ci-Ling Pan
    教師: 潘犀靈
    Date: 2001
    Publisher: Japan Society of Applied Physics
    Relation: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v 40, n 11, p 6226-6230, November 2001
    Keywords: BEAM-EPITAXIAL GAAS
    ION-IMPLANTED GAAS
    LOW-TEMPERATURE GAAS
    ELECTRICAL CHARACTERIZATION
    SEMIINSULATING GAAS
    CARRIER LIFETIMES
    DEFECTS
    LAYERS
    200-DEGREES-C
    IRRADIATION
    Abstract: We report the effects of annealing temperature on the near-band-gap transmittance, the absorption coefficient. and the evolution of shallow-level defects of arsenic-ion-implanted GaAs (hereafter referred to as GaAs:As+) using Fourier-transform infrared spectroscopy. The maximum above-band-gap transmittance and absorption coefficient are determined to be 0.4 and 6 x 10(3) cm(-1), respectively. An anomalous absorption peak at the photon energy of 1.37-1.4eV for the GaAs:As+ samples annealed at lower than 500 degreesC is observed. By either fitting the absorption curve, the band-gap energy of rapid-thermal-annealed GaAs:As+ is evaluated. which blue shifts from 1.36 eV to 1.41 eV as the annealing temperature increases from 300 degreesC to 800 degreesC. The slightly rising absorption spectra at the near-band-gap region suggest the existence of defects and scattering centers. The activation energies and formatting mechanisms of the dense defects in the Rapid-thermal-annealed GaAs:As+ samples were identified, By characterizing the differential absorption spectra, the eVolution of some defect-related absorption bands during the high-temperature annealing process were observed and the correlated structural phenomena were explained
    URI: http://www.jsap.or.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82163
    Appears in Collections:[物理系] 期刊論文

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