National Tsing Hua University Institutional Repository:Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer


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    题名: Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
    作者: Jia-Min Shieh;Yi-Fan Lai;Wei-Xin Ni;Hao-Chung Kuo;Chih-Yao Fang;Jung Y. Huang;Ci-Ling Pan
    教師: 潘犀靈
    日期: 2007
    出版者: American Institute of Physics
    關聯: Appl. Phys. Lett., Vol. 90, art. 051105, January 30, 2007
    关键词: POROUS SILICON
    PHOTOLUMINESCENCE
    SIO2-FILMS
    BLUE
    摘要: The authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82208
    显示于类别:[物理系] 期刊論文

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