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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Terahertz Emission from Vertically Aligned InN Nanorod Arrays

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82214

    Title: Terahertz Emission from Vertically Aligned InN Nanorod Arrays
    Authors: H. Ahn;C.-H. Chuang;Y.-C. Wang;Y.-P. Ku;S. Gwo;Ci-Ling Pan
    教師: 潘犀靈
    Date: 2007
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, v 91, n 13, 2007
    Abstract: Terahertz emission from indium nitride (InN) nanorods and InN film grown by molecular-beam epitaxy on Si(111) substrates has been investigated. Terahertz emission from InN nanorods is at least three times more intense than that from InN film and depends strongly on the size distribution of the nanorods. Surface electron accumulation at the InN nanorods effectively screens out the photo-Dember field in the accumulation layer formed under the surface. The nanorods with considerably large diameter than the thickness of accumulation layer are found to be dominant in the emission of terahertz radiation from InN nanorod arrays.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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