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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Nonvolatile Memory with Switching Interfacial Polar Structures of Nano Si-in-Mesoporous Silica


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82251


    Title: Nonvolatile Memory with Switching Interfacial Polar Structures of Nano Si-in-Mesoporous Silica
    Authors: Jia-Min Shieh;Jung Y. Huang;Jian-Da Huang;Yi-Chao Wang;Ching-Wei Chen;Chao-Kei Wang;An-Thung Cho;Hao-Chung Kuo;Bau-Tong Dai;Ci-Ling Pan
    教師: 潘犀靈
    Date: 2009
    Publisher: American Institute of Physics
    Relation: Appl. Phys. Lett., Vol. 95, art. 143502, Oct. 5, 2009
    Keywords: FERROELECTRIC MEMORY
    NANOCRYSTALS
    NITRIDE
    Abstract: We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82251
    Appears in Collections:[物理系] 期刊論文

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