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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Performance Improvement of P-Type Silicon Solar Cells with Thin Silicon Films Deposited by Low Pressure Chemical Vapor Deposition Method

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83454

    Title: Performance Improvement of P-Type Silicon Solar Cells with Thin Silicon Films Deposited by Low Pressure Chemical Vapor Deposition Method
    Authors: Ching-Tao Li;Fangchi Hsieh;Likarn Wang
    教師: 王立康
    Date: 2013
    Publisher: Elsevier
    Relation: Solar Energy, Elsevier, Volume 88, February 2013, Pages 104–109
    Keywords: Surface passivation
    Amorphous silicon
    Low pressure chemical vapor deposition
    Effective lifetime
    Abstract: It is known that surface passivation plays a significant role in upgrading solar cell performance. In this study, silicon thin films deposited by LPCVD (low pressure chemical vapor deposition) are used to passivate the surface of solar-grade p-type crystalline silicon solar cells for the first time. Intrinsic amorphous silicon films and poly-silicon films were obtained on the front and rear surfaces of solar wafers at the deposition temperatures of 560 °C and 620 °C, respectively. Both kinds of silicon films proved to be effective in improving the open-circuit voltage owing to surface passivation for crystalline silicon solar cells. Optical spectral responses in the short and long wavelength ranges (e.g. the range 300–600 nm and the range 850–1100 nm, respectively) also showed an improvement in photogenerated current resulting from reduced surface recombination rates on the front and back surface.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83454
    Appears in Collections:[電機工程學系] 期刊論文
    [光電工程研究所] 期刊論文

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