English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14639638      Online Users : 49
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Performance Improvement of P-Type Silicon Solar Cells with Thin Silicon Films Deposited by Low Pressure Chemical Vapor Deposition Method


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83454


    Title: Performance Improvement of P-Type Silicon Solar Cells with Thin Silicon Films Deposited by Low Pressure Chemical Vapor Deposition Method
    Authors: Ching-Tao Li;Fangchi Hsieh;Likarn Wang
    教師: 王立康
    Date: 2013
    Publisher: Elsevier
    Relation: Solar Energy, Elsevier, Volume 88, February 2013, Pages 104–109
    Keywords: Surface passivation
    Amorphous silicon
    Poly-silicon
    Low pressure chemical vapor deposition
    Effective lifetime
    Abstract: It is known that surface passivation plays a significant role in upgrading solar cell performance. In this study, silicon thin films deposited by LPCVD (low pressure chemical vapor deposition) are used to passivate the surface of solar-grade p-type crystalline silicon solar cells for the first time. Intrinsic amorphous silicon films and poly-silicon films were obtained on the front and rear surfaces of solar wafers at the deposition temperatures of 560 °C and 620 °C, respectively. Both kinds of silicon films proved to be effective in improving the open-circuit voltage owing to surface passivation for crystalline silicon solar cells. Optical spectral responses in the short and long wavelength ranges (e.g. the range 300–600 nm and the range 850–1100 nm, respectively) also showed an improvement in photogenerated current resulting from reduced surface recombination rates on the front and back surface.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83454
    Appears in Collections:[電機工程學系] 期刊論文
    [光電工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML538View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback