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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Valley-based field-effect transistors in graphene

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83473

    Title: Valley-based field-effect transistors in graphene
    Authors: M.-K. Lee;N.-Y. Lue;C.-K. Wen;G. Y. Wu
    教師: 吳玉書
    Date: 2012
    Publisher: American Physical Society
    Relation: PHYSICAL REVIEW B, American Physical Society, Volume 86, Issue 16, OCT 8 2012, Article Number 165411
    Keywords: field-effect
    Abstract: An analog of the Datta-Das spin field-effect transistor (FET) is investigated, which is all graphene and based on the valley degree of freedom of electrons/holes. The &quot;valley FET&quot; envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') <-> spin (up and down), armchair graphene nanoribbons <-> ferromagnetic leads, graphene quantum wire <-> semiconductor quantum wire, valley-orbit interaction <-> Rashba spin-orbit interaction. The device works as follows. The source (drain) injects (detects) carriers in a specific valley polarization. A side gate electric field is applied to the channel and modulates the valley polarization of carriers due to the valley-orbit interaction, thus controlling the amount of current collected at the drain. The valley FET is characterized by (i) smooth interfaces between leads and the channel, (ii) strong valley-orbit interaction for electrical control of drain current, and (iii) vanishing interband valley-flip scattering. By its analogy to the spin FET, the valley FET provides a potential framework to develop low-power FETs for graphene-based nanoelectronics.
    Relation Link: http://www.aps.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83473
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文
    [物理系] 期刊論文

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