National Tsing Hua University Institutional Repository:Diagnosis of MRAM write disturbance fault
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    题名: Diagnosis of MRAM write disturbance fault
    作者: C.-L. Su;C.-W. Tsai;C.-Y. Chen;W.-Y. Lo;C.-W. Wu;J.-J. Chen;W.-C. Wu;C.-C. Hung;M.-J. Kao
    教師: 吳誠文
    日期: 2010
    出版者: Institute of Electrical and Electronics Engineers
    關聯: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, Institute of Electrical and Electronics Engineers, Volume 18, Issue 12, DEC 2010, Pages 1762-1766
    关键词: MEMORY
    BIST
    摘要: In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM. The proposed test method can evaluate process stability and uniformity. We also develop a built-in self-test (BIST) circuit that supports the proposed WDF diagnosis test method. A 1-Mb toggle MRAM prototype chip with the proposed BIST circuit has been designed and fabricated using a special 0.15-mu m CMOS technology. The BIST circuit overhead is only about 0.05% with respect to the 1-Mb MRAM. The test time is reduced by about 30% as compared with the test method without using the decision write mechanism. The chip measurement results show the efficiency of our proposed method.
    相関连結: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83580
    显示于类别:[電機工程學系] 期刊論文
    [電腦與通訊科技研發中心] 期刊論文
    [資訊工程學系] 期刊論文

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