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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Three-Dimensional 4F2 ReRAM with Vertical BJT Driver by CMOS Logic Compatible Process


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83623


    Title: Three-Dimensional 4F2 ReRAM with Vertical BJT Driver by CMOS Logic Compatible Process
    Authors: Ching-Hua Wang;Yi-Hung Tsai;Kai-Chun Lin;Meng-Fan Chang;Ya-Chin King;Chrong Jung Lin;Shyh-Shyuan Sheu;Yu-Sheng Chen;Heng-Yuan Lee;Chen, F.T.;Ming-Jinn Tsai
    教師: 林崇榮
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES, Institute of Electrical and Electronics Engineers, Volume 58, Issue 8, Special Issue SI, AUG 2011, Pages 2466-2472
    Keywords: Contact resistive RAM (CR-RAM)
    current bias method
    high resistance state (HRS)
    low resistance state (LRS)
    NVM
    set/reset current
    Abstract: A new 3-D vertical bipolar junction transistor (BJT) resistive-switching memory (ReRAM) cell with complimentary metal-oxide-semiconductor-compatible process has been demonstrated and characterized. A new logic-compatible BJT is vertically formed underneath the resistive stacked film of TiN/Ti/HfO2/TiN as a high-performance current driver and bit-cell selector. Using a shallow and tiny N-type lightly doped drain to be an emitter connects with ReRAM film as the bitline, a very thin and self-aligned P-pocket implant layer to be the wordline, and the N-well is the collector of the cells. As a result, the new 3-D ReRAM cell is very area saving and efficiently operated by the high-gain (beta > 50) BJT at a low voltage of 2 V for reset and 1.5 V for set. By adapting the highly shrinkable 3-D BJT current driver in ReRAM, the ReRAM is fully decoupled with the gate length and oxide thickness of logic metal-oxide-semiconductor field-effect transistors; furthermore, it can easily be scaled down to 4F(2) under the lithographic limitation of defining ReRAM film with F-2 area.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83623
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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