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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83626


    Title: A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits
    Authors: Tseng, Yuan Heng;Chia-En Huang;Kuo, C.;Chih, Y.-D.;Ya-Chin King;Chrong Jung Lin
    教師: 林崇榮
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES, Institute of Electrical and Electronics Engineers, Volume 58, Issue 1, JAN 2011, Pages 53-58
    Keywords: Contact resistive random access memory (CR-RAM)
    current method
    high resistance state (HRS)
    low resistance state (LRS)
    nonvolatile memory (NVM)
    set/reset current
    Abstract: A valid resistive dielectric film with excellent state switching is successfully demonstrated in a contact resistive RAM (CR-RAM) structure fabricated by 90-nm CMOS logic technology. This unique CR-RAM cell is realized by placing the RRAM material on top of the N+ silicon with a very small resistive switching area limited by the source line contact. In addition, the set and reset current of the new RRAM cell can be both well controlled and reduced by the choice of 1T + 1R structure. Furthermore, by adjusting operation conditions, an optimized high-speed and good-sensing margin cell is obtained with low levels of set and reset currents. Finally, the lower operation voltages and less current stress significantly improve data reliability, even after long-term high temperature and more than 1000 K cycling stresses.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83626
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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