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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83627


    Title: Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors
    Authors: Shou-En Liu;Ming-Jiue Yu;Chang-Yu Lin;Geng-Tai Ho;Chun-Cheng Cheng;Chih-Ming Lai;Chrong-Jung Lin;Ya-Chin King;Yung-Hui Yeh
    教師: 林崇榮
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS, Institute of Electrical and Electronics Engineers, Volume 32, Issue 2, FEB 2011, Pages 161-163
    Keywords: STRESS
    Abstract: We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (V(T)) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm(2)/V.s, a threshold voltage of 2.86 V, and an on-off ratio of 10(8).
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83627
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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