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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83628


    Title: Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications
    Authors: Chia-En Huang;Ying-Je Chen;Hsun OuYang;Chrong-Jung Lin;Ya-Chin King
    教師: 林崇榮
    Date: 2010
    Publisher: Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS, Japan Society of Applied Physics, Volume 49, Issue 4, Special Issue SI, Part Part 2, 2010, Article Number 04DD05
    Keywords: 90-NM CMOS TECHNOLOGY
    Abstract: This study demonstrates a logic compatible p-channel self-aligned-nitride (SAN) cell for one-time programming (OTP) memory applications. The SAN storage structure is independent of the gate oxide thickness, allowing these cells to be performed in a pure advanced logic process beyond 90 nm. The study also exams the characteristics of the source-side injection hot electron (SSIHE) scheme using the simulation tools, and successfully verified the programming characteristics of the p-channel SAN cell with different program voltages. Moreover, this study shows the proposed SAN cell has a wide read current window, high reliability, and superior immunity to disturbance. Combined with a source-side injection scheme, this cell provides a promising solution for advanced logic nonvolatile memory (NVM) applications.
    Relation Link: http://www.jsap.or.jp/english/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83628
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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