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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Training-based forming process for RRAM yield improvement


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83913


    Title: Training-based forming process for RRAM yield improvement
    Authors: H.-C. Shih;C.-Y. Chen;C.-W. Wu;C.-H. Lin;S.-S. Sheu
    教師: 吳誠文
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: 29th IEEE VLSI Test Symposium (VTS)/Workshop on Design for Reliability and Variability (DRV), Dana Point, CA, MAY 01-05, 2011
    Keywords: MEMORY
    FILMS
    OXIDE
    Abstract: Over the past decade, the resistive memory device known as RRAM has been studied extensively in many ways, and many of its problems have been identified, discussed, and some solved. It is time to move from material, process, and device to circuit design and yield, in order to commercialize RRAM. However, as we move from resistive device to memory circuit, new problems do appear, partly because the operating conditions of resistive devices on real RRAM circuit differ from those in an experimental environment for single devices. In this paper, an over forming problem has been identified from our analysis, and we propose a solution based on training sequence. As a result, by solving the over forming problem, RRAM yield can be improved significantly.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83913
    Appears in Collections:[電機工程學系] 會議論文
    [電腦與通訊科技研發中心] 會議論文
    [資訊工程學系] 會議論文

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