National Tsing Hua University Institutional Repository:Training-based forming process for RRAM yield improvement
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Training-based forming process for RRAM yield improvement


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    题名: Training-based forming process for RRAM yield improvement
    作者: H.-C. Shih;C.-Y. Chen;C.-W. Wu;C.-H. Lin;S.-S. Sheu
    教師: 吳誠文
    日期: 2011
    出版者: Institute of Electrical and Electronics Engineers
    關聯: 29th IEEE VLSI Test Symposium (VTS)/Workshop on Design for Reliability and Variability (DRV), Dana Point, CA, MAY 01-05, 2011
    关键词: MEMORY
    FILMS
    OXIDE
    摘要: Over the past decade, the resistive memory device known as RRAM has been studied extensively in many ways, and many of its problems have been identified, discussed, and some solved. It is time to move from material, process, and device to circuit design and yield, in order to commercialize RRAM. However, as we move from resistive device to memory circuit, new problems do appear, partly because the operating conditions of resistive devices on real RRAM circuit differ from those in an experimental environment for single devices. In this paper, an over forming problem has been identified from our analysis, and we propose a solution based on training sequence. As a result, by solving the over forming problem, RRAM yield can be improved significantly.
    相関连結: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83913
    显示于类别:[電機工程學系] 會議論文
    [電腦與通訊科技研發中心] 會議論文
    [資訊工程學系] 會議論文

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