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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Post-bond testing of 2.5D-SICs and 3D-SICs containing a passive silicon interposer base

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83918

    Title: Post-bond testing of 2.5D-SICs and 3D-SICs containing a passive silicon interposer base
    Authors: C.-C. Chi;E. J. Marinissen;S. K. Goel;C.-W. Wu
    教師: 吳誠文
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: International Test Conference (ITC), Anaheim, CA, SEP 18-23, 2011
    3-D ICS
    Abstract: Through-Silicon Vias (TSVs) enable high-density, low-latency, and low-power interconnects for system chips that consist of multiple dies. In "2.5D" Stacked ICs (2.5D-SICs), multiple dies without TSVs are stacked side-by-side on top of a passive silicon interposer base containing TSVs. In true 3D-SICs, multiple dies containing TSVs themselves are vertically stacked; one or multiple of such stacks are possibly placed on a passive silicon interposer. This paper proposes a post-bond test and design-for-test (DfT) strategy for 2.5D- and 3D-SICs containing a passive silicon interposer base. Functional interconnects in the interposer are reused as much as possible in order to keep the interposer cost low.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83918
    Appears in Collections:[電機工程學系] 會議論文
    [電腦與通訊科技研發中心] 會議論文
    [資訊工程學系] 會議論文

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