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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Low Breakdown Voltage Silicon Avalanche Photodetector Implemented by Interdigitated p-i-n junctions


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83927


    Title: Low Breakdown Voltage Silicon Avalanche Photodetector Implemented by Interdigitated p-i-n junctions
    Authors: Chih-Kuo Tseng;Wei-Cheng Hung;Jhong-Da Tian;Kai-Ning Ku;Neil Na;Yung-Sheng Liu;Ming-Chang M. Lee
    教師: 李明昌
    Date: 2012
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: CLEO 2012, San Jose, USA, 6-11 May 2012
    Keywords: Silicon
    Avalanche
    Photodetector
    Abstract: We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.
    Relation Link: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6325595
    http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83927
    Appears in Collections:[電機工程學系] 會議論文
    [奈微與材料科技中心] 會議論文
    [光電工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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